MJE182 NPN Power Transistor – Datasheet

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The MJE182 NPN type is silicon epitaxial planar, complementary transistor in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications

MJE182 Pinout

MJE182 Pin Configuration

Pin NoPin Name
1Emitter
2Collector
3Base

MJE182 Key Features

  • Collector–Emitter Sustaining Voltage —VCEO(sus) = 80 Vdc — MJE182
  • DC Current Gain —
    • hFE = 30 (Min) @ IC = 0.5 Adc
    • hFE = 12 (Min) @ IC = 1.5 Adc
  • Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB
  • Type Designator: MJE182
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 7 V

MJE182 Specification

Ic (mA)PdVce (max)Vcb hfe@IcFt
31.58010050-25010050

MJE182 Equivalent/Alternate:

  • MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE172

Application

  • Low Power Audio Amplifier
  • Low Current
  • High Speed Switching Applications

You can download this datasheet for MJE182 NPN Power Transistor from the link given below: