MJE182 NPN Power Transistor – Datasheet

The MJE182 NPN type is silicon epitaxial planar, complementary transistor in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications

MJE182 Pinout

MJE182 Pin Configuration

Pin No	Pin Name
1	Emitter
2	Collector
3	Base

MJE182 Key Features

• Collector–Emitter Sustaining Voltage —VCEO(sus) = 80 Vdc — MJE182
• DC Current Gain —
  • hFE = 30 (Min) @ IC = 0.5 Adc
  • hFE = 12 (Min) @ IC = 1.5 Adc
• Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB
• Type Designator: MJE182
• Material of Transistor: Si
• Polarity: NPN
• Maximum Emitter-Base Voltage |Veb|: 7 V

MJE182 Specification

Ic (mA)	Pd	Vce (max)	Vcb	hfe	@Ic	Ft
3	1.5	80	100	50-250	100	50

MJE182 Equivalent/Alternate:

• MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE172

Application

• Low Power Audio Amplifier
• Low Current
• High Speed Switching Applications

You can download this datasheet for MJE182 NPN Power Transistor from the link given below: