MJ11016 NPN Power Darlington Transistor – Datasheet

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MJ11016 is a preferred device high-current complementary silicon transistor for use as output devices in complementary general purpose amplifier applications

MJ11016 Pinout

MJ11016 Pin Configuration

Pin NoPin Name
1Base
2Emitter
3Collector

MJ11016 Key Features

  • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
  • Monolithic Construction with Built–in Base Emitter Shunt Resistor
  • Junction Temperature to +200C
  • Type Designator: MJ11016
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 5 V

MJ11016 Specification

Ic (mA)PdVce (max)Vcb hfe@Ic
3020012012050-6005000

MJ11016 Equivalent/Alternate:

  • MJ10004, MJ10004P, MJ10005, MJ10005P, MJ10006, MJ11015

Application

  • General Purpose Amplifier
  • Darlington

You can download this datasheet for MJ11016 NPN Power Darlington Transistor from the link given below: