MJ2501 PNP Power Darlington Transistor – Datasheet

The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.

MJ2501 Pinout

MJ2501 Pin Configuration

Pin No	Pin Name
1	Base
2	Emitter
3	Collector

MJ2501 Key Features

• Built-in Base-Emitter Shunt Resistors
• High DC current gain- hFE = 1000 (Min) @ IC = -5A
• Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min)
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
• Type Designator: MJ2501
• Material of Transistor: Si
• Polarity: PNP
• Maximum Emitter-Base Voltage |Veb|: 5 V

MJ2501 Specification

Ic (mA)	Pd	Vce (max)	Vcb	hfe	@Ic
10	150	80	80	1000	5000

MJ2501 Equivalent/Alternate:

• MJ21193G, MJ21194, MJ21194G, MJ21195, MJ3001

Application

• Power Linear
• Switching Application

You can download this datasheet for MJ2501 PNP Power Darlington Transistor from the link given below: