BD649 NPN Darlington Power Transistor – Datasheet

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BD649 NPN Darlington power transistor is lot of variations for robust device performance and reliable operation application designed for use as complementary AF push-pull output stage applications

What is Darlington Transistor?

A Darlington transistor is also known as a Darlington pair is an electronics component made via the combination of two PNP or NPN BJTs (Bipolar Junction Transistor) connected in such a way that it allows a very high amount of current gain. Darlington pair is simply used in many applications where switching or amplification is crucial.

BD649 Pinout

BD649 Pin Configuration

Pin NoPin Name
1Base
2Collector
3Emitter

BD649 Key Features

  • Collector-Emitter Breakdown Voltage-
    • : V(BR)CEO= 100V(Min)
  • High DC Current Gain
    • : hFE= 750(Min) @IC= 3A
  • Low Saturation Voltage
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Type Designator: BD649
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 5 V

BD649 Specification

Ic (mA)PdVce (max)Vcb hfe@Ic
8621001207503000

BD649 Equivalent/Alternate:

  • BD605, BD610, BD633, BD634, BD635, BD636, BD637, BD650

Application

  • Complementary AF Push-Pull Output Stage
  • General Purpose Amplifier

You can download this datasheet for BD649 NPN Darlington Power Transistor from the link given below: