BD115 is an NPN high voltage power transistor. High voltage power bipolar transistors with a voltage rating from 500 V to 1000 V are ideal for battery-charger, power supply, and lighting applications.
BD115 Pinout
BD115 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Emitter |
| 2 | Base |
| 3 | Collector |
BD115 Key Features
- Type Designator: BD115
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Max. Operating Junction Temperature (Tj): 200 °C
- Package: TO39
BD115 Specification
| Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | FT |
|---|---|---|---|---|---|
| 0.15 | 6 | 180 | 245 | 22 | 80 |
Alternate for BD115:
BD115 Equivalent:
- BD130, BD13003B, BD131, BD132, BD135
Application
- Audio Amplifiers
- Switching Applications
You can download this datasheet for BD115 NPN High-Voltage Transistor from the link given below:
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Please Note: Users can download the official BD115 datasheet in PDF
