TIP110 NPN Power Darlington Transistor – Datasheet

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The TIP110 is silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications

TIP110 Pinout

TIP110 Pin Configuration

Pin NoPin Name
1Base
2Collector
3Emitter
4Case (Collector)

TIP110 Key Features

  • High DC Current Gain —
    • hFE = 2500 (Typ) @ IC = 1.0 Adc
  • Collector–Emitter Sustaining Voltage — @ 30 mAdc
    • VCEO(sus) = 60 Vdc (Min) — TIP110
  • Low Collector–Emitter Saturation Voltage —
    • VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
  • Monolithic Construction with Built–in Base–Emitter Shunt Resistors
  • TO–220AB Compact Package
  • Type Designator: TIP110
  • Material of Transistor: Si
  • Polarity: NPN

Specification

Ic (mA)Pd (mW)Vce (max)Vcb hfe@Ic
250606010001000

TIP110 Equivalent/Alternate:

  • TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP115

Application

  • General–Purpose Amplifier
  • Low–Speed Switching
  • Medium Power Linear

You can download this datasheet for TIP110 NPN Power Darlington Transistor from the link given below: