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The TIP110 is silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications
TIP110 Pinout
TIP110 Pin Configuration
Pin No | Pin Name |
---|---|
1 | Base |
2 | Collector |
3 | Emitter |
4 | Case (Collector) |
TIP110 Key Features
- High DC Current Gain —
- hFE = 2500 (Typ) @ IC = 1.0 Adc
- Collector–Emitter Sustaining Voltage — @ 30 mAdc
- VCEO(sus) = 60 Vdc (Min) — TIP110
- Low Collector–Emitter Saturation Voltage —
- VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
- Monolithic Construction with Built–in Base–Emitter Shunt Resistors
- TO–220AB Compact Package
- Type Designator: TIP110
- Material of Transistor: Si
- Polarity: NPN
Specification
Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | @Ic |
---|---|---|---|---|---|
2 | 50 | 60 | 60 | 1000 | 1000 |
TIP110 Equivalent/Alternate:
- TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP115
Application
- General–Purpose Amplifier
- Low–Speed Switching
- Medium Power Linear
You can download this datasheet for TIP110 NPN Power Darlington Transistor from the link given below: