684000 512Kx8 CMOS RAM – Datasheet

The 684000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung’s advanced CMOS process. The 684000 has an output enable input for precise control of the data outputs also has a chip enable inputs for the minimum current power-down mode The 684000 has been designed for high speed and low power applications. It is particularly well suited for battery backup non-volatile memory applications.

684000 Pinout

684000 Pin Configuration

Pin No	Pin Name	Description
1	A18	Address Pin 18
2	A16	Address Pin 16
3	A14	Address Pin 14
4	A12	Address Pin 12
5	A7	Address Pin 7
6	A6	Address Pin 6
7	A5	Address Pin 5
8	A4	Address Pin 4
9	A3	Address Pin 3
10	A2	Address Pin 2
11	A1	Address Pin 1
12	A0	Address Pin 0
13	I/O 1	Data Inputs/Outputs 1
14	I/O 2	Data Inputs/Outputs 2
15	I/O 3	Data Inputs/Outputs 3
16	VSS	Ground Pin
17	I/O 4	Data Inputs/Outputs 4
18	I/O 5	Data Inputs/Outputs 5
19	I/O 6	Data Inputs/Outputs 6
20	I/O 7	Data Inputs/Outputs 7
21	I/O 8	Data Inputs/Outputs 8
22	CS’	Chip Select Pin
23	A10	Address Pin 10
24	OE’	Output Enable Pin
25	A11	Address Pin 11
26	A9	Address Pin 9
27	A8	Address Pin 8
28	A13	Address Pin 13
29	WE’	Write Enable Pin
30	A17	Address Pin 17
31	A15	Address Pin 15
32	VCC	Power Supply Pin

684000 Key Feature

• Fast Access Time : 55, 70, 85, 100ns(Max)
• Low Power Dissipation
• Standby (CMOS) :2.57mW(Max)
  • 550 W(Max.) L-Version
  • 110 W(Max.) L-L-Version
• Operating :385mW/MHz{Max.)
• Single 5V 10% power supply
• TTL Compatible inputs and outputs
• Three-State Output
• Battery back-up operation
• Data retention
  • 2V([Min.) :full version
  • 2.4V(Min.): Standard Version

You can download this datasheet for 684000 512Kx8 CMOS RAM – Datasheet from the link given below: