628512 512Kx8 CMOS RAM – Datasheet

The HM628512B is a 4-Mbit static RAM organized 512k-word × 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (footprint pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high-density mounting. The HM628512B is suitable for a battery backup system

628512 Pinout

628512 Pin Configuration

Pin No	Pin Name	Description
1	A18	Address Pin 18
2	A16	Address Pin 16
3	A14	Address Pin 14
4	A12	Address Pin 12
5	A7	Address Pin 7
6	A6	Address Pin 6
7	A5	Address Pin 5
8	A4	Address Pin 4
9	A3	Address Pin 3
10	A2	Address Pin 2
11	A1	Address Pin 1
12	A0	Address Pin 0
13	I/O 0	Data Inputs/Outputs 0
14	I/O 1	Data Inputs/Outputs 1
15	I/O 2	Data Inputs/Outputs 2
16	VSS	Ground Pin
17	I/O 3	Data Inputs/Outputs 3
18	I/O 4	Data Inputs/Outputs 4
19	I/O 5	Data Inputs/Outputs 5
20	I/O 6	Data Inputs/Outputs 6
21	I/O 7	Data Inputs/Outputs 7
22	CS’	Chip Select Pin
23	A10	Address Pin 10
24	OE’	Output Enable Pin
25	A11	Address Pin 11
26	A9	Address Pin 9
27	A8	Address Pin 8
28	A13	Address Pin 13
29	WE’	Write Enable Pin
30	A17	Address Pin 17
31	A15	Address Pin 15
32	VCC	Power Supply Pin

628512 Key Feature

• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
  • Active: 50 mW/MHz (typ)
  • Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation

You can download this datasheet for 628512 512Kx8 CMOS RAM – Datasheet from the link given below: