2N7000 N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
2N7000 Pinout
2N7000 Pinout
| Pin No | Pin Name |
|---|---|
| 1 | Source |
| 2 | Gate |
| 3 | Drain |
2N7000 Key Features
- Type Designator: 2N7000
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Package: TO-92
- Very fast switching
- Logic level compatible
- Low Input and Output Leakage
- Low Input Capacitance
- Low On-Resistance
2N7000 Specification
| Id(A) | P d(W) | V ds(V) | T j(C) | V gs(V) | V gs(th) | R ds(ohm) | Q g(n C) | T r(ns) | Cd (pF) |
| 0.35 | 1 | 60 | 150 | 18 | 3 | 5 | 1.4 | 15 | 20 |
2N7000 Equivalent/Alternate
- 2N70, 2N700, 2N700-18, 2N7000A, 2N7000BU, 2N7000K, 2N7000P, 2N7000TA, 2N7000Z
Applications
- Direct Logic-Level Interface
- Battery Operated Systems
- Solid-State Relays
- High speed line driver
- Logic level translator
You can download this datasheet for 2N7000 0.2A 60V N-Channel Enhancement FET from the link given below:
