2N7000 0.2A 60V N-Channel Enhancement FET – Datasheet

2N7000 N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

2N7000 Pinout

2N7000 Pinout

Pin No	Pin Name
1	Source
2	Gate
3	Drain

2N7000 Key Features

• Type Designator: 2N7000
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Package: TO-92
• Very fast switching
• Logic level compatible
• Low Input and Output Leakage
• Low Input Capacitance
• Low On-Resistance

2N7000 Specification

Id(A)	P d(W)	V ds(V)	T j(C)	V gs(V)	V gs(th)	R ds(ohm)	Q g(n C)	T r(ns)	Cd (pF)
0.35	1	60	150	18	3	5	1.4	15	20

2N7000 Equivalent/Alternate

• 2N70, 2N700, 2N700-18, 2N7000A, 2N7000BU, 2N7000K, 2N7000P, 2N7000TA, 2N7000Z

Applications

• Direct Logic-Level Interface
• Battery Operated Systems
• Solid-State Relays
• High speed line driver
• Logic level translator

You can download this datasheet for 2N7000 0.2A 60V N-Channel Enhancement FET from the link given below: