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The 2N6099 NPN General Purpose Transistor is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built-in Temperature Sensing Diode
2N6099 Pinout
2N6099 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
2N6099 Key Features
- With TO-92 package
- High current capability
2N6099 Specification
| Name | Description |
|---|---|
| Collector-Emitter Voltage (Vce) | 60 V |
| Collector-Base Voltage (Vcb) | 70 V |
| Emitter-Base Voltage (Veb) | 8 V |
| Collector Current (Ic) | 10 A |
| Collector Power Dissipation (Pc) | 75 W |
| Transition Frequency | 0.8 MHz |
Application
- For use in general-purpose amplifier and switching applications
You can download this datasheet for 2N6099 NPN General Purpose Transistor – Datasheet from the link given below:
