2N6099 NPN General Purpose Transistor – Datasheet

The 2N6099 NPN General Purpose Transistor is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built-in Temperature Sensing Diode

2N6099 Pinout

2N6099 Pin Configuration

Pin No	Pin Name
1	Base
2	Collector
3	Emitter

2N6099 Key Features

• With TO-92 package
• High current capability

2N6099 Specification

Name	Description
Collector-Emitter Voltage (Vce)	60 V
Collector-Base Voltage (Vcb)	70 V
Emitter-Base Voltage (Veb)	8 V
Collector Current (Ic)	10 A
Collector Power Dissipation (Pc)	75 W
Transition Frequency	0.8 MHz

Application

• For use in general-purpose amplifier and switching applications

You can download this datasheet for 2N6099 NPN General Purpose Transistor – Datasheet from the link given below: