The 2N6059 is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration mounted in a Jedec TO-3 metal case. It is intended for use in power linear and low-frequency switching applications.
What is Darlington Transistor?
A Darlington transistor is also known as a Darlington pair is an electronics component made via the combination of two PNP or NPN BJTs (Bipolar Junction Transistor) connected in such a way that it allows a very high amount of current gain. Darlington pair is simply used in many applications where switching or amplification is crucial.
2N6059 Pinout
2N6059 Pin Configuration
Pin No | Pin Name |
---|---|
1 | Base |
2 | Emitter |
3 | Collector |
2N6059 Key Features
- Built-in Base-Emitter Shunt Resistors
- High DC current gain hFE = 750 (Min) @ IC = 6A
- Collector-Emitter Sustaining Voltage VCEO(SUS)= 100V(Min)
- Type Designator: 2N6059
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 10 V
Specification
Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | FT (MHz) |
---|---|---|---|---|---|
12 | 150 | 100 | 100 | 750 | 4 |
2N6059 Equivalent/Alternate:
- 2N60, 2N600, 2N6000, 2N6001, 2N6002, 2N6052
Application
- General Purpose Amplifier
- Low Frequency Switching
You can download this datasheet for 2N6059 NPN Power Darlington Transistor from the link given below: