2N5551 NPN General Purpose Transistor – Datasheet

The 2N5551 is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications

2N5551 Pinout

2N5551 Pin Configuration

Pin No	Pin Name
1	Emitter
2	Base
3	Collector

2N5551 Key Features

• Low current (max. 300 mA)
• High voltage (max. 160 V)

2N5551 Specification

Name	Description
Collector-Emitter Voltage (Vce)	160 V
Collector-Base Voltage (Vcb)	180 V
Emitter-Base Voltage (Veb)	6 V
Collector Current (Ic)	0.6 A
Collector Power Dissipation (Pc)	0.31 W
Transition Frequency	100 MHz

Application

• Switching and amplification in high voltage applications such as telephony

You can download this datasheet for 2N5551 NPN General Purpose Transistor – Datasheet from the link given below: