Contents
hide
The 2N5551 is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications
2N5551 Pinout
2N5551 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Emitter |
| 2 | Base |
| 3 | Collector |
2N5551 Key Features
- Low current (max. 300 mA)
- High voltage (max. 160 V)
2N5551 Specification
| Name | Description |
|---|---|
| Collector-Emitter Voltage (Vce) | 160 V |
| Collector-Base Voltage (Vcb) | 180 V |
| Emitter-Base Voltage (Veb) | 6 V |
| Collector Current (Ic) | 0.6 A |
| Collector Power Dissipation (Pc) | 0.31 W |
| Transition Frequency | 100 MHz |
Application
- Switching and amplification in high voltage applications such as telephony
You can download this datasheet for 2N5551 NPN General Purpose Transistor – Datasheet from the link given below:
