29F040 4M 90ns CMOS Flash Memory – Datasheet

The 29F040B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The 29F040B is offered in 32-pin PLCC, TSOP, and PDIP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0-volt VPP is not required for write or erase operations. The device can also be programmed by standard EPROM programmers.

This device is manufactured using AMD’s 0.35 µm process technology and offers all the features and benefits of the 29F040, which was manufactured using 0.5 µm process technology. In addition, the Am29F040B has a second toggle bit, DQ2, and also offers the ability to program in the Erase Suspend mode.

29F040 Pinout

29F040 Pin Configuration

Pin No	Pin Name	Description
1	A18	Address Pin 18
2	A16	Address Pin 16
3	A15	Address Pin 15
4	A12	Address Pin 12
5	A7	Address Pin 7
6	A6	Address Pin 6
7	A5	Address Pin 5
8	A4	Address Pin 4
9	A3	Address Pin 3
10	A2	Address Pin 2
11	A1	Address Pin 1
12	A0	Address Pin 0
13	DQ0	Data Inputs/Outputs 0
14	DQ1	Data Inputs/Outputs 1
15	DQ2	Data Inputs/Outputs 2
16	VSS	Ground Pin
17	DQ3	Data Inputs/Outputs 3
18	DQ4	Data Inputs/Outputs 4
19	DQ5	Data Inputs/Outputs 5
20	DQ6	Data Inputs/Outputs 6
21	DQ7	Data Inputs/Outputs 7
22	CE’	Chip Enable
23	A10	Address Pin 11
24	OE’	Output Enable
25	A11	Address Pin 11
26	A9	Address Pin 9
27	A8	Address Pin 8
28	A13	Address Pin 13
29	A14	Address Pin 14
30	A17	Address Pin 17
31	WE	Write Enable
32	VCC	Power Supply

29F040 Key Feature

• 5.0 V ± 10% for read and write operations
  • Minimizes system level power requirements
• Manufactured on 0.35 µm process technology
  • Compatible with 0.5 µm Am29F040 device
• High performance
  • Access times as fast as 55 ns
• Low power consumption
  • 20 mA typical active read current
  • 30 mA typical program/erase current
  • 1 µA typical standby current (standard access time to active mode)
• Flexible sector architecture
  • 8 uniform sectors of 64 Kbytes each
  • Any combination of sectors can be erased
  • Supports full chip erase

You can download this datasheet for 29F040 4M 90ns CMOS Flash Memory – Datasheet from the link given below: