29F020 256k 120ns CMOS Flash Memory – Datasheet

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The 29F020B Family consists of 2 Mbit, 5.0 volt-only Flash memory devices organized as 262,144 bytes. The 29F020B offers the RESET# function, the 29F020B does not. The data appears on DQ7–DQ0. The device is offered in 32-pin PLCC, 32-pin TSOP, and 32-pin PDIP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. No VPP is required for write or erases operations.

The device can also be programmed by standard EPROM programmers. This device is manufactured using AMD’s 0.32 µm process technology and offers all the features and benefits of the 29F020, which was manufactured using 0.5 µm process technology. The standard device offers access times of 55, 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has a separate chip enable (CE#), write enable (WE#) and output-enable (OE#) controls

29F020 Pinout

29F020 Pin Configuration

Pin NoPin NameDescription
1RESETReset Pin
2A16 Address Pin 16
3A15Address Pin 15
4A12 Address Pin 12
5A7 Address Pin 7
6A6 Address Pin 6
7A5 Address Pin 5
8A4 Address Pin 4
9A3 Address Pin 3
10A2 Address Pin 2
11A1 Address Pin 1
12A0 Address Pin 0
13DQ 0 Data Output 0
14 DQ 1 Data Output 1
15 DQ 2 Data Output 2
16VssGround Pin
17 DQ 3 Data Output 3
18 DQ 4 Data Output 4
19 DQ 5 Data Output 5
20 DQ 6 Data Output 6
21 DQ 7 Data Output 7
22CE’Chip Enable Pin
23A10 Address Pin 10
24OE’Output Enable Pin
25A11 Address Pin 11
26A9 Address Pin 9
27A8 Address Pin 8
28A13 Address Pin 13
29A14 Address Pin 14
30A17 Address Pin 17
31WE’Write Enable Pin
32VCCPower Supply

29F020 Key Feature

  • Single power supply operation
    • 5.0 Volt-only operation for read, erase, and
  • program operations
    • Minimizes system-level requirements
  • Manufactured on 0.32 µm process technology
    • Compatible with 0.5 µm Am29F002 device
  • High performance
    • Access times as fast as 55 ns
  • Low power consumption (typical values at 5 MHz)
    • 1 µA standby mode current
    • 20 mA read current
    • 30 mA program/erase current
  • Flexible sector architecture
    • One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors
    • Supports full chip erase

You can download this datasheet for 29F020 256k 120ns CMOS Flash Memory – Datasheet from the link given below: