28F010 128k 150ns CMOS Flash Memory

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The 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for reading/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during the final test; and in-system after-sale. The 28F010 increases memory flexibility while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs. Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process technology.

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28F010 Pinout

28F010 Pin Configuration

Pin No	Pin Name	Description
1	VPP	Programming Supply
2	A16	Address Pin 16
3	A15	Address Pin 15
4	A12	Address Pin 12
5	A7	Address Pin 7
6	A6	Address Pin 6
7	A5	Address Pin 5
8	A4	Address Pin 4
9	A3	Address Pin 3
10	A2	Address Pin 2
11	A1	Address Pin 1
12	A0	Address Pin 0
13	DQ 0	Data Output 0
14	DQ 1	Data Output 1
15	DQ 2	Data Output 2
16	GND	Ground Pin
17	DQ 3	Data Output 3
18	DQ 4	Data Output 4
19	DQ 5	Data Output 5
20	DQ 6	Data Output 6
21	DQ 7	Data Output 7
22	CE’	Chip Enable Pin
23	A10	Address Pin 10
24	OE’	Output Enable Pin
25	A11	Address Pin 11
26	A9	Address Pin 9
27	A8	Address Pin 8
28	A13	Address Pin 13
29	A14	Address Pin 14
30	NC	No Connection
31	WE	Write Enable Pin
32	VCC	Power Supply

28F010 Key Feature

Flash Electrical Chip-Erase
- 1 Second Typical Chip-Erase
Quick Pulse Programming Algorithm
- 10 ms Typical Byte-Program
- 2 Second Chip-Program
100,000 Erase/Program Cycles
12.0V g5% VPP
High-Performance Read
- 65 ns Maximum Access Time
CMOS Low Power Consumption
- 10 mA Typical Active Current
- 50 mA Typical Standby Current
- 0 Watts Data Retention Power