The AT28C17 is a low-power, high-performance Electrically Erasable, and Programmable Read-Only Memory with easy-to-use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C17 is accessed like a static RAM for the read or write cycles without the need for external components.
During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY and DATA POLLING of I/O7.
28C17 Pinout
28C17 Pin Configuration
Pin No | Pin Name | Description |
1 | BUSY’ | Busy Port Pin |
2 | NC | No Connection Pin |
3 | A7 | Address Pin 7 |
4 | A6 | Address Pin 6 |
5 | A5 | Address Pin 5 |
6 | A4 | Address Pin 4 |
7 | A3 | Address Pin 3 |
8 | A2 | Address Pin 2 |
9 | A1 | Address Pin 1 |
10 | A0 | Address Pin 0 |
11 | I/O 0 | Data Inputs/Outputs 0 |
12 | I/O 1 | Data Inputs/Outputs 1 |
13 | I/O 2 | Data Inputs/Outputs 2 |
14 | GND | Ground Pin |
15 | I/O 3 | Data Inputs/Outputs 3 |
16 | I/O 4 | Data Inputs/Outputs 4 |
17 | I/O 5 | Data Inputs/Outputs 5 |
18 | I/O 6 | Data Inputs/Outputs 6 |
19 | I/O 7 | Data Inputs/Outputs 7 |
20 | CE’ | Chip Enable Pin |
21 | A10 | Address Pin 10 |
22 | OE’ | Output Enable |
23 | A11 | Address Pin 11 |
24 | A9 | Address Pin 9 |
25 | A8 | Address Pin 8 |
26 | NC | No Connection |
27 | WE’ | Write Enable Pin |
28 | VCC | Supply Voltage Pin |
28C17 Key Feature
- Fast Read Access Time – 150 ns
- Fast Byte Write – 200 µs or 1 ms
- Self-Timed Byte Write Cycle
- Internal Address and Data Latches
- Internal Control Timer
- Automatic Clear Before Write
- Direct Microprocessor Control
- DATA POLLING
- READY/BUSY Open Drain Output
- Low Power
- 30 mA Active Current
- 100 µa CMOS Standby Current
- High Reliability
- Endurance: 10^4 or 10^5 Cycles
- Data Retention: 10 Years
- 5V ± 10% Supply
- CMOS & TTL Compatible Inputs and Output
- JEDEC Approved Byte Wide Pinout
- Commercial and Industrial Temperature Ranges
You can download this datasheet for 28C17 16K Parallel EEPROM – Datasheet – from the link given below: