28C16A 16K 250ns Parallel EEPROM

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The 28C16A is a CMOS 16K non-volatile Electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need for external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Data polling allows the user to read the location last written to when the write operation is complete. CMOS design and processing enable this part to be used in systems where reduced power consumption and reliability are required. A complete family of packages is offered to provide the utmost flexibility in applications

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28C16 Pinout

28C16 Pin Configuration

Pin No	Pin Name	Description
1	A7	Address Pin 7
2	A6	Address Pin 6
3	A5	Address Pin 5
4	A4	Address Pin 4
5	A3	Address Pin 3
6	A2	Address Pin 2
7	A1	Address Pin 1
8	A0	Address Pin 0
9	I/O 0	Data Inputs/Outputs 0
10	I/O 1	Data Inputs/Outputs 1
11	I/O 2	Data Inputs/Outputs 2
12	VSS	Supply Source Pin
13	I/O 3	Data Inputs/Outputs 3
14	I/O 4	Data Inputs/Outputs 4
15	I/O 5	Data Inputs/Outputs 5
16	I/O 6	Data Inputs/Outputs 6
17	I/O 7	Data Inputs/Outputs 7
18	CE’	Chip Enable Pin
19	A10	Address Pin 10
20	OE’	Output Enable
21	WE’	Write Enable Pin
22	A9	Address Pin 9
23	A8	Address Pin 8
24	VCC	Supply Voltage Pin

28C16 Key Feature

Electronic Signature for Device Identification
5-Volt-Only Operation
Organized 2Kx8 JEDEC Standard Pinout
24-pin Dual-In-Line Package
32-pin PLCC Package
28-pin Thin Small Outline Package (TSOP) 8x20mm
28-pin Very Small Outline Package (VSOP) 8×13.4mm
Available for Extended Temperature Ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
Fast Read Access Time—150 ns
CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100 µA Standby
Fast Byte Write Time—200 µs or 1 ms
Data Retention >200 years
High Endurance – Minimum 104 Erase/Write Cycles