27SF512 512K 90ns CMOS Flash Memory

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The SST27SF512 is 32K x8 / 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low-cost flash, manufactured with SST’s proprietary, high-performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12-volt power supply. They have to be erased prior to programming.

Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF512 is suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs.

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SST27SF512 Pinout

SST27SF512 Pin Configuration

Pin Number	Pin Name	Description
1	VPP	Programming Supply
2	A12	Address Input
3	A7	Address Input
4	A6	Address Input
5	A5	Address Input
6	A4	Address Input
7	A3	Address Input
8	A2	Address Input
9	A1	Address Input
10	A0	Address Input
11	DQ0	Data Output
12	DQ1	Data Output
13	DQ2	Data Output
14	VSS	Ground Pin
15	DQ3	Data Output
16	DQ4	Data Output
17	DQ5	Data Output
18	DQ6	Data Output
19	DQ7	Data Output
20	CE’	Chip Enable
21	A10	Address Input
22	OE	Output Enable
23	A11	Address Input
24	A9	Address Input
25	A8	Address Input
26	A13	Address Input
27	A14	Address Input
28	VDD	Positive Power Supply

SST27SF512 Key Features

Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8
4.5-5.5V Read Operation
Superior Reliability
- Endurance: At least 1000 Cycles
- Greater than 100 years Data Retention
Low Power Consumption
- Active Current: 20 mA (typical)
- Standby Current: 10 µA (typical)
Fast Read Access Time
- 70 ns
- 90 ns