27SF010 1024K 90ns CMOS Flash Memory

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The SST27SF010 is a 32K x8 / 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low-cost flash, manufactured with SST’s proprietary,
high-performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12-volt power supply.

They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. The SST27SF010 is suited for applications that require infrequent writes and low power nonvolatile
storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs.

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27SF010 Pinout

27SF010 Pin Configuration

Pin Number	Pin Name	Description
1	VPP	Programming Supply
2	A16	Address Input
3	A15	Address Input
4	A12	Address Input
5	A7	Address Input
6	A6	Address Input
7	A5	Address Input
8	A4	Address Input
9	A3	Address Input
10	A2	Address Input
11	A1	Address Input
12	A0	Address Input
13	DQ0	Data Output
14	DQ1	Data Output
15	DQ2	Data Output
16	VSS	Ground Pin
17	DQ3	Data Output
18	DQ4	Data Output
19	DQ5	Data Output
20	DQ6	Data Output
21	DQ7	Data Output
22	CE’	Chip Enable
23	A10	Address Input
24	OE	Output Enable
25	A11	Address Input
26	A9	Address Input
27	A8	Address Input
28	A13	Address Input
29	A14	Address Input
30	NC	No Connection
31	PGM	Programming Logic
32	Vcc	Positive Power Supply

27SF010 Key Features

Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8
4.5-5.5V Read Operation
Superior Reliability
- Endurance: At least 1000 Cycles
- Greater than 100 years Data Retention
Low Power Consumption
- Active Current: 20 mA (typical)
- Standby Current: 10 µA (typical)
Fast Read Access Time
- 70 ns
- 90 ns