1N6263 Small Signal Schottky Barrier Diode – Datasheet

1N6263 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode featuring high breakdown, low turn-on voltage and ultrafast switching.

1N6263 Features

• High breakdown
• Low turn-on voltage
• Ultrafast switching

1N6263 Specification

Mfr Package Description	GLASS PACKAGE-2, DO-35
Diode Type	RECTIFIER DIODE
Diode Element Material	SILICON
Forward Voltage-Max (VF)	1.0  V
Non-rep Pk Forward Current-Max	2.0  A
Operating Temperature-Max	200.0  Cel
Output Current-Max	0.015  A
Peak Reflow Temperature (Cel)	235
Power Dissipation-Max	0.4  W
Rep Pk Reverse Voltage-Max	60.0  V
Reverse Recovery Time-Max	0.001  µs

You can download this datasheet for 1N6263 Small Signal Schottky Barrier Diode from the link given below: