1N5822 Schottky Barrier Diode – Datasheet

1N5822 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.

1N5822 Features

• Extremely Low Forward Voltage
• Low Stored Charge
• Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb−Free Devices

1N5822 Specification

Mfr Package Description	DO-201A, 2 PIN
Diode Type	RECTIFIER DIODE
Diode Element Material	SILICON
Forward Voltage-Max (VF)	0.7  V
Non-rep Pk Forward Current-Max	150.0  A
Operating Temperature-Min	-55.0  Cel
Operating Temperature-Max	150.0  Cel
Output Current-Max	3.0  A
Rep Pk Reverse Voltage-Max	40.0  V
Reverse Current-Max	1500.0  µA

Application

• Low voltage
• High frequency inverters
• Reverse polarity protection

You can download this datasheet for 1N5822 Schottky Barrier Diode from the link given below: