1N4149 100V 200mA General Purpose Diode – Datasheet

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The 1N4149 is high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.

1N4149 Features

  • Silicon Epitaxial Planar Diode
  • High reliability
  • Low reverse current
  • Low forward voltage drop
  • High speed switching

1N4149 Specification

Mfr Package DescriptionHERMETIC SEALED, GLASS PACKAGE-2
Diode TypeRECTIFIER DIODE
Diode Element MaterialSILICON
Forward Voltage-Max (VF)1.0  V
Non-rep Pk Forward Current-Max0.5  A
Operating Temperature-Min-65.0  Cel
Operating Temperature-Max175.0  Cel
Output Current-Max0.2  A
Power Dissipation-Max0.5  W
Rep Pk Reverse Voltage-Max100.0  V
Reverse Recovery Time-Max0.004  µs

You can download this datasheet for 1N4149 100V 200mA General Purpose Diode from the link given below: